SYSTEMS AND METHODS FOR GROWING POLYCRYSTALLINE SILICON INGOTS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 18, 2009
app pub date -
Dec 14, 2007
filing date -
Dec 14, 2007
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Systems and methods for growing polycrystalline silicon ingots are described. The systems and methods involve placing an initial charge of polysilicon in a crucible, using a direct solidification/heat exchanger method furnace to melt the initial charge to form a melt, and then introducing additional polysilicon to the melt while the melt and crucible are within the furnace. The additional polysilicon may be added to the crucible in order to bring the melt to any desired volume, including until the crucible is full or topped off. An augmenting mechanism, such as a hopper, may be used to introduce additional polysilicon to the melt. The hopper may have a silicon introduction controller that controls the introduction of polysilicon into the melt. Other embodiments are described.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully