Method of making a semiconductor device with residual amine group free multilayer interconnection

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United States of America Patent

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12289227

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Abstract

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gas with the H group contained in the second SiOC film and the generation of an amine group such as NH in the second SiOC film can be prevented. Thus, the dissolution hindering phenomenon in the chemically amplified resist film can be avoided.

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FUJITSU MICROELECTRONICS LIMITED7-1 NISHI-SHINJUKU 2-CHOME SHINJUKU-KU TOKYO 163-0722

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Inventor Name Address # of filed Patents Total Citations
Ikeda, Masanobu Kawasaki , JP 152 597
Kakamu, Katsumi Kasugai , JP 21 116
Watatani, Hirofumi Kawasaki , JP 41 489

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges7814908714622651381027160483613101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +01002003004005006007008009001000110012001300140015001600

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