Method of making a semiconductor device with residual amine group free multilayer interconnection
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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app pub date -
Oct 23, 2008
filing date -
Jun 7, 2002
priority date (Note) -
Abandoned
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Abstract
gas with the H group contained in the second SiOC film and the generation of an amine group such as NH in the second SiOC film can be prevented. Thus, the dissolution hindering phenomenon in the chemically amplified resist film can be avoided.
First Claim
all claims..Other Claims data not available
Family
Country | kind | publication No. | Filing Date | Type | Sub-Type |
---|---|---|---|---|---|
JP | A | JP2004014841 | Jun 07, 2002 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
Published unexamined patent application | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD | Jan 15, 2004 | |||
US | A1 | US20030227087 | Mar 12, 2003 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
FIRST PUBLISHED PATENT APPLICATION | Semiconductor device and method of manufacturing the same | Dec 11, 2003 | |||
TW | B | TW589712 | Mar 13, 2003 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
GRANTED PATENT OR PATENT OF ADDITION | Semiconductor device and method of manufacturing the same | Jun 01, 2004 | |||
CN | C | CN100347854 | Mar 27, 2003 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
GRANTED PATENT FOR INVENTION | Semiconductor device and method of manufacturing the same | Nov 07, 2007 | |||
KR | A | KR20030095217 | Mar 28, 2003 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
UNEXAMINED PATENT APPLICATION | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD | Dec 18, 2003 |
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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FUJITSU MICROELECTRONICS LIMITED | 7-1 NISHI-SHINJUKU 2-CHOME SHINJUKU-KU TOKYO 163-0722 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ikeda, Masanobu | Kawasaki , JP | 152 | 597 |
# of filed Patents : 152 Total Citations : 597 | |||
Kakamu, Katsumi | Kasugai , JP | 21 | 116 |
# of filed Patents : 21 Total Citations : 116 | |||
Watatani, Hirofumi | Kawasaki , JP | 41 | 489 |
# of filed Patents : 41 Total Citations : 489 |
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Patent Citation Ranking
- 3 Citation Count
- H01L Class
- 2.08 % this patent is cited more than
- 16 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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