METHOD FOR FABRICATION OF SINGLE ELECTRON TRANSISTORS
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United States of America Patent
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Issued Date -
Jun 11, 2009
app pub date -
Dec 6, 2007
filing date -
Dec 6, 2007
priority date (Note) -
Abandoned
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Abstract
A method for fabricating a Single Electron Transistor (SET). The method comprises forming a FinFET structure, forming an SET structure from the FinFET structure such that an active area of the SET structure is formed from a channel of the FinFET structure, whereby the active area is self-aligned with a source and a drain of the FinFET structure to form the SET structure.
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