INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFUSED SOURCE/DRAIN EXTENSIONS
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United States of America Patent
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Issued Date -
Jun 11, 2009
app pub date -
Dec 7, 2007
filing date -
Dec 7, 2007
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Abandoned
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Abstract
An integrated circuit system that includes: providing a PFET device including a doped epitaxial layer; and forming a source/drain extension by employing an energy source to diffuse a dopant from the doped epitaxial layer.
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