HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE
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United States of America Patent
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Issued Date -
Jun 11, 2009
app pub date -
Dec 5, 2007
filing date -
Dec 5, 2007
priority date (Note) -
Abandoned
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Abstract
The present invention discloses a high brightness LED structure, wherein a highly-doped n-type AlInP island structure is formed on a portion of the surface of an AlGaInP semiconductor stack structure and functions as a current barrier structure. The island structure is covered by a p-type window layer and positioned below a p-type ohmic electrode. The island structure can make more input current flow to the AlGaInP semiconductor stack structure not shielded by the light-emitting side electrode and thus can optimize the current distribution and promote the light-emitting efficiency.
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