SEMICONDUCTOR LASER
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United States of America Patent
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Issued Date -
Jun 4, 2009
app pub date -
Feb 27, 2008
filing date -
May 8, 2007
priority date (Note) -
Abandoned
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Abstract
There is disclosed a Be-containing II-VI group semiconductor laser that has a laminated structure formed on an InP substrate to continuously emit at room temperature without crystal degradation. A basic structure of the semiconductor laser is formed over the InP substrate by use of a lattice-matched II-VI group semiconductor including Be. An active layer and cladding layers are formed to be a double heterostructure with a type I band lineup, in order to increase the efficiency for injecting carriers into the active layer. The active layer and the cladding layers are also formed to enhance the light confinement to the active layer, in which the Mg composition of the p-type cladding layer is set to Mg<0.2.
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