Vacuum channel transistor and manufacturing method thereof
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United States of America Patent
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Apr 17, 2012
Grant Date -
Jun 4, 2009
app pub date -
Sep 30, 2008
filing date -
Nov 30, 2007
priority date (Note) -
Expired
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Abstract
Disclosed are a vacuum channel transistor including a planar cathode layer formed of a material having a low work function or a planar cathode layer including a heat resistant layer formed of a material having a low work function, and a manufacturing method of the same. In the vacuum channel transistor, electrons can be emitted even when a low voltage is applied to a gate layer, a voltage of an anode layer has a small influence on electron emission of a cathode layer, and instability of emission current is obviated. Accordingly, high efficiency and a long lifespan can be achieved, and thus operational stability is secured.
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