ELECTRIC FUSE DEVICE MADE OF POLYSILICON SILICIDE

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United States of America Patent

APP PUB NO 20090140382A1
SERIAL NO

12277752

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Abstract

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A polysilicon silicide electric fuse device, comprising: a substrate; a semiconductor material layer disposed on said substrate, said semiconductor material layer includes lead-out areas of the same doping type at both ends, and an intermediate area of non-doping or having dopant concentration lower than those of said lead-out areas at both ends; and one or more burn-out areas is/are provided in said intermediate area; and a metal silicide layer is provided on said semiconductor material layer. Through the application of said polysilicon silicide electric fuse device, the burning out of said fuse device is thus controlled to within said intermediate area of no doping or light doping, hereby increasing the mean value and reducing distribution area of electrical resistance after burning out of a fuse, and alleviating the overheating of surrounding areas as caused by a current during the burning out of a fuse.

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Patent Owner(s)

Patent OwnerAddress
GRACE SEMICONDUCTOR MANUFACTURING CORP201203 SHANGHAI ZHANGJIANG HI TECH PARK GUOSHOUJING ROAD NO 818 SHANGHAI CITY SHANGHAI CITY 201203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gao, Wen-Yu Shanghai , CN 1 6
Li, Ray Shanghai , CN 2 7
Wang, Ching-Dong Shanghai , CN 2 7
Wei, Min-Xia Shanghai , CN 1 6

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