NONVOLATILE MEMORIES WITH HIGHER CONDUCTION-BAND EDGE ADJACENT TO CHARGE-TRAPPING DIELECTRIC
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 4, 2009
app pub date -
Dec 3, 2007
filing date -
Dec 3, 2007
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
In a nonvolatile memory, the tunnel dielectric (150) has a surface in physical contact with the charge trapping dielectric (160) and also has a surface in physical contact with a semiconductor region providing the active area (120, 130, 140). Under the vacuum level, the bottom edge of the conduction band of the tunnel dielectric (150) is higher at the surface contacting the charge-trapping dielectric (160) than at the surface contacting the active area.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully