AG-BASED SPUTTERING TARGET
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United States of America Patent
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N/A
Issued Date -
Jun 4, 2009
app pub date -
Oct 30, 2008
filing date -
Nov 29, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
satisfies 10 μm or less.(Procedure 1) In the surface of the sputtering face, a plurality of locations are optionally selected, and a micrograph (magnification: 40-2,000 times) of each selected location is taken.(Procedure 2) Four or more straight lines are drawn in a grid pattern or radially on each micrograph, a number n of grain boundaries existing on the straight line is investigated, and a grain size d is calculated on the basis of the following equation on each straight line.of the sputtering face.
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