PROCESS FOR PRODUCING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LASER ELEMENT AND GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LASER ELEMENT
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United States of America Patent
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Issued Date -
May 28, 2009
app pub date -
Mar 31, 2006
filing date -
Mar 31, 2005
priority date (Note) -
Abandoned
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Abstract
This invention provides a process for producing a gallium nitride-based compound semiconductor laser element, characterized in that a plane inclined at not less than 0.16 degree and not more than 5.0 degrees in terms of absolute value in the direction of <1-100> in (0001) Ga plane, or a plane in which the root mean square of (A2+B2) is not less than 0.17 and not more than 7.0 wherein A represents the off angle of (0001) Ga plane to <1-100> direction and B represents the off angle of (0001) Ga plane to <11-20> direction, is used as a crystal growth plane of a gallium nitride substrate, and an active layer is grown at a growth rate of not less than 0.5 ú/sec and not more than 5.0 ú/sec. The production process is advantageous in that, even in the case of use of a gallium nitride substrate having a large off angle, the slope efficiency is high, the element resistance is reduced, the drive voltage can be reduced, the production yield is high, the variation is small, and high-output violet light can be generated. There is also provided a compound semiconductor laser element produced by the above process.
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