METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH DUAL FULLY SILICIDED GATE
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United States of America Patent
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Issued Date -
May 28, 2009
app pub date -
Nov 28, 2007
filing date -
Nov 28, 2007
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Abandoned
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Abstract
A method of manufacturing a dual work function semiconductor device is disclosed. In one aspect, the method comprises providing a first metal layer over a first electrode in a first region, and at least a first work function tuning element. The method further comprises providing a second metal layer of a second metal in a second region at least over a second electrode. The method further comprises performing a first silicidation of the first electrode and a second silicidation of the second electrode simultaneously.
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