DUAL WORK FUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
May 28, 2009
app pub date -
Oct 24, 2008
filing date -
Oct 24, 2007
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method of manufacturing dual work function devices starting from a single metal electrode and the device resulting therefrom are disclosed. In one aspect, the method includes a single-metal-single-dielectric (SMSD) CMOS integration scheme. A single dielectric stack comprising a gate dielectric layer and a dielectric capping layer and one metal layer overlying the dielectric stack are first deposited, forming a metal-dielectric interface. Upon forming the dielectric stack and the metal layer, at least part of the dielectric capping layer is selectively modified by adding work function tuning elements, the part being adjacent to the metal-dielectric interface.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully