CRYSTAL SILICON ARRAY, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR

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United States of America Patent

APP PUB NO 20090134394A1
SERIAL NO

12277732

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Abstract

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A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 .mu.m square or more, and at least one needle crystal portion having a grain length of 3.5 .mu.m or more.

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Patent OwnerAddress
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO LTD66-2 HORIKAWA-CHO SAIWAI-KU KAWASAKI-SHI KANAGAWA 212-0013

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AZUMA, Kazufumi Yokohama-shi, JP 28 1520
Endo, Takahiko Okegawa-shi, JP 51 738
Kato, Tomoya Mobara-shi, JP 53 618
Matsumura, Masakiyo Kamakura-shi, JP 78 1086
Shimoto, Shigeyuki Konosu-shi, JP 3 122
Taniguchi, Yukio Matsudo-shi, JP 107 3310

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