SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME
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United States of America Patent
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Issued Date -
May 28, 2009
app pub date -
Nov 2, 2006
filing date -
Nov 7, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
There are provided a sputtering target and a process for producing a sputtering target. The sputtering target includes a first layer located on its side to be sputter treated and a second layer located on its side not to be sputter treated. The first and second layers are bonded to each other through a bonding interface between the first layer and the second layer. The sputtering target satisfying the following requirements X and Y:
- requirement X: A/B≦1.5 and
- requirement Y: A/C≦1.5,
wherein A represents an oxygen peak value for the bonding interface; B represents an oxygen peak value for the first layer; and C represents an oxygen peak value for the second layer. The sputtering target is advantageous in that a spent sputtering target can be recycled to utilize resources and can form a thin film while effectively preventing the occurrence of abnormal discharge and splash.
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