Compositions for Removal of Metal Hard Mask Etching Residues from a Semiconductor Substrate
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United States of America Patent
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Issued Date -
May 21, 2009
app pub date -
Sep 29, 2008
filing date -
Nov 16, 2007
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Abandoned
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Abstract
Compositions for removing and cleaning resist, etching residues, planarization residues, metal fluorides and/or metal oxides from a substrate are provided, the composition including a metal ion-free fluoride compound and water. The resist, etching residues, planarization residues, metal fluorides and/or metal oxides are generated during one or more patterning processes during which a metal hard mask is used.
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