DUAL DAMASCENE INTEGRATION STRUCTURES AND METHOD OF FORMING IMPROVED DUAL DAMASCENE INTEGRATION STRUCTURES
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United States of America Patent
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Oct 6, 2008
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Jun 3, 2004
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Abstract
Methods of densifying a porous ultra-low-k (ULK) dielectric material by using gas-cluster ion-beam processing are disclosed. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel ULK dual damascene structure is disclosed with densified interfaces and no hard-masks.
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