Method and System to Provide a Polysilicon Capacitor with Improved Oxide Integrity
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United States of America Patent
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Issued Date -
May 21, 2009
app pub date -
Nov 20, 2007
filing date -
Nov 20, 2007
priority date (Note) -
Abandoned
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Abstract
A system and method in accordance with the present invention allows for an improved oxide integrity of a polysilicon capacitor compared to capacitors manufactured using conventional semiconductor processing techniques. This is accomplished by moving the capacitor implant step to a time after the deposition of the polysilicon. As an additional benefit, a separate capacitor oxide growth does not need to be performed.
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