Method for controlling a DRAM

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United States of America Patent

APP PUB NO 20090125761A1
SERIAL NO

12116208

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Abstract

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A method for controlling a DRAM includes detecting failed memory cells of the DRAM, recording the rows corresponding to the failed memory cells, receiving a control signal for accessing the memory cell with column address X and row address Y, determining if the row address Y is in the recorded failed rows list, and if yes, replacing the memory cell to be accessed with the memory cell with the column address X and row address Z which is not same as Y.

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Patent Owner(s)

Patent OwnerAddress
ETRON TECHNOLOGY INCNO 6 TECHNOLOGY ROAD 5 HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Ming-Sung Hsinchu County , TW 14 36
Hung, Bin-Feng Taipei City , TW 1 1
Lu, Wen-Min Hsinchu City , TW 8 12

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