METHODS AND STRUCTURES FOR EXCHANGE-COUPLED MAGNETIC MULTI-LAYER STRUCTURE WITH IMPROVED OPERATING TEMPERATURE BEHAVIOR
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United States of America Patent
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Issued Date -
May 14, 2009
app pub date -
Nov 13, 2007
filing date -
Nov 13, 2007
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Abandoned
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Abstract
Exchange-coupled magnetic multilayer structures for use with toggle MRAM devices and the like include a tunnel barrier layer (108) and a synthetic antiferromagnet (SAF) structure (300) formed on the tunnel barrier layer (108), wherein the SAF (300) includes a plurality (e.g., four or more) of ferromagnetic layers (302, 306, 310, 314) antiferromagnetically or ferromagnetically coupled by a plurality of respective coupling layers (304, 308, 312). The microcrystalline texture of one or more of the ferromagnetic layers is reduced to substantially zero as measured from X-Ray Diffraction by exposure of various layers to oxygen, by forming a detexturing layer, by adding oxygen during the ferromagnetic or coupling layer fabrication, and/or by using amorphous materials.
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