CLUSTER E-BEAM LITHOGRAPHY SYSTEM

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United States of America Patent

APP PUB NO 20090121159A1
SERIAL NO

12259280

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Abstract

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A hybrid lithography system is disclosed to achieve high throughput and high resolution of sub 32 nm lithography. The hybrid system contains an optical lithographer for expose pattern area where features above 32 nm, and a cluster e-beam lithography system for expose pattern area where features is sub 32 nm.

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Patent Owner(s)

Patent OwnerAddress
HERMES-MICROVISION INCHSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, ZHONGWEI San Jose , US 131 1026
HWANG, ARCHI Hisnchu , TW 1 1
JAU, JACK Los Alto , US 55 721
PAN, CHUNG-SHIH Palo Alto , US 21 347
WANG, YI XIANG Fremont , US 8 78

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