Low Pressure Method of Annealing Diamonds
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United States of America Patent
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Issued Date -
Apr 30, 2009
app pub date -
Oct 2, 2008
filing date -
Oct 2, 2007
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Abandoned
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Abstract
The present invention relates to method of improving the optical properties of diamond at low pressures and more specifically to a method of producing a CVD diamond of a desired optical quality which includes growing CVD diamond and raising the temperature of the CVD diamond from about 1400° C. to about 2200° C. at a pressure of from about 1 to about 760 torr outside the diamond stability field in a reducing atmosphere for a time period of from about 5 seconds to about 3 hours.
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