CMOS Detector with Reduced Sensitivity to X-Rays
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United States of America Patent
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Issued Date -
Apr 30, 2009
app pub date -
Oct 25, 2007
filing date -
Oct 25, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An imaging array and method for operating the same is disclosed. The imaging array includes a semiconductor substrate having an epitaxial layer of semiconductor material deposited on a first surface thereof. A plurality of photodiodes is formed in a top surface of the epitaxial layer. The imaging array also includes a depletion layer underlying the photodiodes and disposed between the epitaxial layer and the semiconductor substrate. The depletion layer is connected to a power rail for removing electrons collected in the depletion layer. The depletion layer collects electrons generated by x-ray interactions in the substrate. The depletion layer can also be biased such that the depletion layer collects electrons collected by the photodiodes to provide a reset operation for the imaging array. The current flowing through the depletion layer can be used to generate a trigger signal indicating the start of an x-ray exposure.
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