DUAL-GATE MEMORY DEVICE WITH CHANNEL CRYSTALLIZATION FOR MULTIPLE LEVELS PER CELL (MLC)
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United States of America Patent
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Issued Date -
Apr 9, 2009
app pub date -
Oct 3, 2007
filing date -
Oct 3, 2007
priority date (Note) -
Abandoned
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Abstract
A method and a dual-gate memory device having a memory transistor and an access transistor are provided to allow multiple bits to be stored in the dual-gate memory device. The memory transistor and the access transistor each have a channel region formed in a mobility enhanced material crystallized from an amorphous semiconductor material. The amorphous semiconductor material may include, for example, silicon. Mobility enhancement may be achieved by: (a) Excimer laser annealing; (b) lateral crystallization; (c) metal-induced lateral crystallization; (d) a combination of laser annealing and metal-induced laterally crystallization steps; or (e) solid-phase, epitaxially growth.
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