CLEANING METHOD OF APPARATUS FOR DEPOSITING METAL CONTAINING FILM
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United States of America Patent
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Issued Date -
Apr 9, 2009
app pub date -
Jan 22, 2007
filing date -
May 29, 2006
priority date (Note) -
Abandoned
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Abstract
Provided is a cleaning method of an apparatus for depositing a metal containing film using a metal organic (MO) source. A fluorine (F)-containing gas and a carbon (C)-eliminating gas are supplied to a reactor of the apparatus so that in-situ cleaning can be performed. A solid by-product is not generated in the method, and after a predetermined quantity of wafers is processed, in-situ cleaning can be performed without exposing the reactor to the air such that productivity of the apparatus is maximized.
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