RETENTION IMPROVEMENT IN DUAL-GATE MEMORY
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United States of America Patent
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Issued Date -
Apr 2, 2009
app pub date -
Sep 29, 2008
filing date -
Oct 2, 2007
priority date (Note) -
Abandoned
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Abstract
A manufacturing process improves retention capabilties of dual-gate non-volatile memory cells by limiting the effects of lateral charge movement. The process limits lateral extents of the charge storage medium that is an integral part of the memory device within the dual-gate device.
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