Patterning process and resist composition used therein
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United States of America Patent
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Aug 23, 2011
Grant Date -
Apr 2, 2009
app pub date -
Sep 4, 2008
filing date -
Sep 20, 2007
priority date (Note) -
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Abstract
A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern, the first positive resist composition comprising a polymer having copolymerized recurring units having naphthol and recurring units with an alkaline solubility that increases under the action of acid; causing the first resist coating to crosslink and cure by irradiation of high-energy radiation of sub-200 nm wavelength; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.
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