Growing N-polar III-nitride Structures
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United States of America Patent
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Issued Date -
Mar 19, 2009
app pub date -
Sep 12, 2008
filing date -
Sep 14, 2007
priority date (Note) -
Abandoned
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Abstract
Methods of forming a stable N-polar III-nitride structure are described. A Ga-polar device can be formed on a substrate. A carrier wafer is attached to the Ga-polar surface. The substrate is removed from the assembly. The N-polar surface that remains is offcut and, optionally, subsequent layers are formed on the offcut surface.
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