THIN FILM TRANSISTOR MANUFACTURING METHOD AND SUBSTRATE STRUCTURE

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United States of America Patent

SERIAL NO

12323834

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Abstract

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A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.

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Patent Owner(s)

Patent OwnerAddress
INDUSTRIAL RESEARCH INSTITUTEHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ho, Jia-Chong Hsinchu, TW 55 409
Hu, Tarng-Shiang Hsinchu, TW 49 388
Huang, Liang-Yin Hsinchu, TW 13 8
Wang, Yi-Kai Hsinchu , TW 38 546

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