GALLIUM NITRIDE DIODES AND INTEGRATED COMPONENTS
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United States of America Patent
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Issued Date -
Mar 19, 2009
app pub date -
Sep 17, 2007
filing date -
Sep 17, 2007
priority date (Note) -
Abandoned
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Abstract
A diode device can include an enhancement mode gallium nitride transistor having a gate, a drain and a source, wherein the gate is connected to the drain to enable the device to perform as a diode. In some embodiments, an integrated switching-diode is described that includes a substrate, a gallium nitride switching transistor on the substrate and a free wheeling diode on the substrate and coupled to the switching transistor.
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