Gallium oxide single crystal composite, process for producing the same, and process for producing nitride semiconductor film utilizing gallium oxide single crystal composite
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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N/A
Issued Date -
Mar 19, 2009
app pub date -
May 11, 2005
filing date -
May 13, 2004
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Provided are: a gallium oxide single crystal composite, which can provide, for example, upon a crystal growth of a nitride semiconductor, a high-quality cubic crystal in which mixing of a hexagonal crystal is reduced to thereby realize dominant growth of a cubic crystal over hexagonal crystal, and which can be utilized as a substrate particularly suitable for epitaxial growth of cubic GaN; a process for producing the same; and a process for producing a nitride semiconductor film. The gallium oxide single crystal composite has a gallium nitride layer formed of cubic gallium nitride on a surface of the gallium oxide single crystal; the process for producing the gallium oxide single crystal composite includes subjecting the surface of gallium oxide single crystal to nitriding treatment using ECR plasma or RF plasma to form the gallium nitride layer formed of cubic gallium nitride on the surface of the gallium oxide single crystal; and further, the process for producing the nitride semiconductor film includes growing the nitride semiconductor film on the surface of the gallium oxide single crystal composite by an RF-MBE method.
First Claim
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