COMPOUND SEMICONDUCTOR SUBSTRATE

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United States of America Patent

APP PUB NO 20090065812A1
SERIAL NO

12204328

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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made of any one of compounds which are different from the compound of the first metal compound layer out of TiC, TiN, VC and VN are laminated in this order alternately each other over the Si single crystal.

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Patent Owner(s)

Patent OwnerAddress
COVALENT MATERIALS CORPORATIONSHINAGAWA-KU TOKYO 141-0032

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ABE, Yoshihisa Hadano City , JP 49 490
Komiyama, Jun Hadano City , JP 79 1798
Nakanishi, Hideo Hadano City , JP 60 733
Oishi, Hiroshi Hadano City , JP 82 922
Suzuki, Shunichi Hadano City , JP 67 468
Yoshida, Akira Hadano City , JP 184 1977

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