METHODS AND STRUCTURES FOR AN INTEGRATED TWO-AXIS MAGNETIC FIELD SENSOR
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United States of America Patent
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Issued Date -
Mar 5, 2009
app pub date -
Aug 30, 2007
filing date -
Aug 30, 2007
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Abandoned
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Abstract
A two-axis, single-chip external magnetic field sensor incorporates tunneling magneto-resistance (TMR) technology. In one embodiment, an integrated device includes at least two sensor elements having pinned layers with orientation situated at a known angle (e.g., 90 degrees) with respect to each other. In the presence of a magnetic field, the information from the multiple sensor elements can be processed (e.g., using a conventional bridge configuration) to determine the orientation of the integrated sensor with respect to the external field. In order to achieve an integrated sensor with multiple pinned layer orientations, a novel processing method utilizes antiferromagnetic pinning layers different materials with different blocking temperatures (e.g., PtMn and IrMn).
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