THIN FILM TRANSISTOR AND DISPLAY APPARATUS
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United States of America Patent
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app pub date -
Oct 16, 2008
filing date -
Feb 16, 2007
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Abandoned
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Abstract
A thin film transistor includes a crystal growth region in which a crystal is two-dimensionally grown on a plane, a source region and a drain region formed in the crystal growth region, and a gate electrode which is formed on a channel region between the source region and the drain region through a gate insulator film. The thin film transistor is characterized in that a side end portion on the channel region of the source region or drain region is aligned with a position located within a range of 1 μm to 3.5 μm away from a crystal growth start position.
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