AG BASE ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Mar 5, 2009
app pub date -
Jul 3, 2008
filing date -
Aug 29, 2007
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Abstract
A sputtering target made of an Ag base alloy containing 0.6 to 10.5 atomic % Ta and 2 to 13 atomic % Cu, is characterized in that: when the sputtering surface of the sputtering target is image-analyzed,(1) the ratio of the total area of Ta particles having a circle equivalent diameter of from 10 μm or more to 50 μm or less, to the total area of all Ta particles, is 60% or more, and the average distance between the centers of gravity of Ta particles is from 10 μm or more to 50 μm or less; and(2) the ratio of the total area of Cu particles having a circle equivalent diameter of from 10 μm or more to 50 μm or less, to the total area of all Cu particles, is 70% or more, and the average distance between the centers of gravity is from 60 μm or more to 120 μm or less.
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