Method for fabricating a semiconductor device
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United States of America Patent
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N/A
Issued Date -
Feb 26, 2009
app pub date -
Aug 22, 2008
filing date -
Aug 22, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for fabricating a semiconductor device for preventing a poisoned via is provided. A substrate with a conductive layer formed thereon is provided. A composite layer is formed over the substrate and the conductive layer, wherein the composite layer comprises a dielectric layer and a spin-on-glass layer. A via hole is formed through the composite layer, wherein the via hole exposes a surface of the conductive layer. A protection layer is formed on a sidewall of the via hole so as to prevent out-gassing from the spin-on-glass layer. A barrier layer is formed on the protection layer and the conductive layer within the via hole. And a metal layer is deposited on the barrier layer within the via hole to fill the via hole.
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