SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
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United States of America Patent
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Issued Date -
Feb 26, 2009
app pub date -
Dec 21, 2006
filing date -
Dec 21, 2005
priority date (Note) -
Abandoned
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Abstract
A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
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