Piezoelectric deposition for BAW resonators
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United States of America Patent
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Issued Date -
Feb 26, 2009
app pub date -
Aug 24, 2007
filing date -
Aug 24, 2007
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Abandoned
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Abstract
Piezoelectric deposition for BAW resonators wherein a thin amorphous layer of AlN over the bottom electrode before depositing a second layer of AlN over the amorphous layer of AlN, the depositing occurring at a temperature allowing the deposited AlN to self-organize into a desired columnar phase. The bottom electrode may have acoustic isolation thereunder, such as a Bragg mirror. Various details of the fabrication process are disclosed.
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