HIGH-BOND STRENGTH SILICON AND A METHOD FOR THE PRODUCTION AND USE THEREOF
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United States of America Patent
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Issued Date -
Feb 26, 2009
app pub date -
Sep 12, 2006
filing date -
Sep 30, 2005
priority date (Note) -
Abandoned
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Abstract
/g, a mean pore diameter for the pores, whose diameter ranges from 3.6 to 1,000 nm, greater than 11 nm and a cohesive index (IC) less than 0.25 are provided. Also provided are methods for producing such silicons by silicon wet granulation, heat treating and possible sieving. The silicons can be used in the form of a liquid carrier, a catalyst carrier or additive and for liquid or gaseous filtering.
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