Photoresist Composition for Deep UV and Process Thereof
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United States of America Patent
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Issued Date -
Feb 12, 2009
app pub date -
Aug 6, 2007
filing date -
Aug 6, 2007
priority date (Note) -
Abandoned
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Abstract
The present invention refers to a photoresist composition comprising (i) a polymer A comprising at least one acid labile group; (ii) at least one photoacid generator; (iii) at least one base; (iv) a polymer B, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (v) a coating solvent composition. The present invention also relates to the process of imaging the photoresist.
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