Tunnel Junction Barrier Layer Comprising a Diluted Semiconductor with Spin Sensitivity
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United States of America Patent
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Issued Date -
Feb 12, 2009
app pub date -
May 23, 2005
filing date -
May 25, 2004
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Abandoned
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Abstract
The invention provides a magnetic tunnel junction having a tunneling barrier layer wherein said tunneling barrier layer comprises a diluted magnetic semiconductor with spin sensitivity. The magnetic tunnel junction may according to the invention comprise a bottom lead coupled to a bottom electrode which is coupled to a diluted magnetic semiconductor coupled to a top electrode being coupled to a top lead, wherein said bottom electrode is non magnetic. The invention further provides various components and a computer, exploiting the magnetic tunnel junction according to the invention.
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