NONVOLATILE MEMORIES WITH CHARGE TRAPPING LAYERS CONTAINING SILICON NITRIDE WITH GERMANIUM OR PHOSPHORUS
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United States of America Patent
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Issued Date -
Feb 5, 2009
app pub date -
Jul 30, 2007
filing date -
Jul 30, 2007
priority date (Note) -
Abandoned
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Abstract
A nonvolatile memory has a charge trapping layer which includes a layer (130) made of silicon nitride doped with germanium or phosphorus (210). The germanium or phosphorus contains a large percentage of scattered, non-crystallized atoms uniformly distributed in the silicon nitride layer to increase the charge trapping density.
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