Ultra-high purity NiPt alloys and sputtering targets comprising same
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United States of America Patent
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Issued Date -
Jan 29, 2009
app pub date -
Jul 23, 2007
filing date -
Jul 23, 2007
priority date (Note) -
Abandoned
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Abstract
A method of making a NiPt alloy having an ultra-high purity of at least about 4N5 and suitable for use as a sputtering target, comprises steps of: heating predetermined amounts of lesser purity Ni and Pt at an elevated temperature in a crucible to form a NiPt alloy melt, the crucible being composed of a material which is inert to the melt at the elevated temperature; and transferring the melt to a mold having a cavity with a surface coated with a release agent which does not contaminate the melt with impurity elements. The resultant NiPt alloy has a very low concentration of impurity elements and is subjected to cross-directional hot rolling for reducing thickness and grain size.
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