RESISTIVE MEMORY INCLUDING BIDIRECTIONAL WRITE OPERATION
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United States of America Patent
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Issued Date -
Jan 29, 2009
app pub date -
Jul 24, 2007
filing date -
Jul 24, 2007
priority date (Note) -
Abandoned
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Abstract
A memory includes a first electrode, a second electrode, and a resistive memory element coupled between the first electrode and the second electrode. The memory includes a circuit configured to write a data value to the resistive memory element by sequentially applying a first signal from the first electrode to the second electrode and a second signal from the second electrode to the first electrode.
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