SEMICONDUCTOR CHIP WITH SOLDER BUMP SUPPRESSING GROWTH OF INTER-METALLIC COMPOUND AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Jan 22, 2009
app pub date -
Feb 8, 2006
filing date -
Feb 18, 2005
priority date (Note) -
Abandoned
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Abstract
A semiconductor chip having a solder bump and a method of fabricating the same are provided. Conventionally, an inter-metallic compound (IMC) unexpectedly grows at an interface of the solder bump by means of heat generated during operation of the semiconductor chip, thereby weakening mechanical property of the semiconductor chip. To solve this drawback, the semiconductor chip includes at least one metal adhesion layer formed on an electrode pad of the semiconductor chip, an interlayer isolation layer formed on the metal adhesion layer, at least one penetration layer formed on the interlayer isolation layer and penetrating into the solder bump, and the solder bump formed on the penetration layer. Thereby, materials of the penetration layer penetrate into the solder bump to change the solder bump into a multi-component solder bump, so that the growth of the IMC is suppressed, and the reliability of the semiconductor chip can be improved.
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