Method for the production of crystalline silicon foils
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United States of America Patent
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Issued Date -
Jan 15, 2009
app pub date -
Jun 10, 2005
filing date -
Jun 10, 2004
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Abandoned
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Abstract
The invention is a method for the production of a silicon foil with a targeted charge carrier transport to the p-n transition by means of an integral electric field (‘drift field’). By varying the crystal growth speed and introducing a doping substance into the fluid silicon beforehand, a crystallization process can be carried out in such a way that a gradient over the foil thickness is produced in the doping profile in the silicon. This gradient of the doping profile gives rise to an electric field. With the aid of various foil casting techniques foils that are suitable for the production of solar cells can thus be produced in a relatively simple manner.
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