Lateral Power MOSFET With Integrated Schottky Diode
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United States of America Patent
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Issued Date -
Jan 15, 2009
app pub date -
Jul 8, 2008
filing date -
Jul 11, 2007
priority date (Note) -
Abandoned
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Abstract
A semiconductor device includes a substrate. The substrate includes a semiconductor material. An electrically isolated region is formed over the substrate. A metal-oxide-semiconductor field-effect transistor (MOSFET) is formed over the substrate within the electrically isolated region. The electrically isolated region includes a trench formed around the electrically isolated region. An insulative material such as silicon dioxide (SiO2) may be deposited into the trench. A diode is formed over the substrate within the electrically isolated region. In one embodiment, the diode is a Schottky diode. A metal layer may be formed over a surface of the substrate to form an anode of the diode. A first electrical connection is formed between a source of the MOSFET and an anode of the diode. A second electrical connection is formed between a drain of the MOSFET and a cathode of the diode.
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