Importance

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Abstract

Preferred embodiments provide a method for removing at least part of a copper comprising layer from a substrate, the substrate comprising at least a copper comprising surface layer. The method comprises in a first reaction chamber converting at least part of the copper comprising surface layer into a copper halide surface layer and in a second reaction chamber removing at least part of the copper halide surface layer by exposing it to a photon comprising ambient, thereby initiating formation of volatile copper halide products. During exposure to the photon comprising ambient, the method furthermore comprises removing the volatile copper halide products from the second reaction chamber to avoid saturation of the volatile copper halide products in the second reaction chamber. The method according to preferred embodiments may be used to pattern copper comprising layers. For example, the method according to preferred embodiments may be used to form copper comprising interconnect structures in a semiconductor device.

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First Claim