METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
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United States of America Patent
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Issued Date -
Jan 1, 2009
app pub date -
Jan 4, 2008
filing date -
Jan 4, 2007
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Abandoned
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Abstract
A method of manufacturing a semiconductor substrate having a DSB structure that enables simplification of a manufacturing process by optimizing a total thickness of oxides on surfaces of two wafers before being bonded together is provided. The method comprises a process of preparing a first semiconductor wafer and a second semiconductor wafer, a process of bonding the first semiconductor wafer and second semiconductor wafer when a total of thickness of an oxide on the surface of the first semiconductor wafer and that of an oxide on the surface of the second semiconductor wafer is 0.4 nm or more and 1.0 nm or less, and a process of providing heat treatment to a semiconductor substrate after the process of the bonding and before a process of thinning one of the wafers.
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