Gettering material for encapsulated microdevices and method of manufacture
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United States of America Patent
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Issued Date -
Jan 1, 2009
app pub date -
Jun 27, 2007
filing date -
Jun 27, 2007
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Abandoned
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Abstract
A method for providing improved gettering in a vacuum encapsulated microdevice is described. The method includes designing a getter alloy to more closely approximate the coefficient of thermal expansion of a substrate upon which the getter alloy is deposited. Such a getter alloy may have a weight percentage of less than about 8% iron (Fe) and greater than about 50% zirconium, with the balance being vanadium and titanium, which may better match the coefficient of thermal expansion of a silicon substrate. In one exemplary embodiment, the improved getter alloy is deposited on a silicon substrate prepared with a plurality of indentation features, which increase the surface area of the substrate exposed to the vacuum. Such a getter alloy is less likely to delaminate from the indented surface of the substrate material during heat-activated steps, such as activating the getter material and bonding a lid wafer to the device wafer supporting the microdevice.
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